TAOYUAN, Taiwan – Inotera Memories Inc., a DRAM-making joint venture formed between Infineon Technologies AG and Nanya Technology Corp. in 2002, opened its 300-mm wafer fab Wednesday (June 30). The ...

TAOYUAN, Taiwan — Inotera Memories Inc., the DRAM joint venture formed between Infineon Technologies AG and Nanya Technology Corp. in 2002, opened its 300-mm wafer fab Wednesday (June 30). The first ...

Infineon Technologies has disclosed its latest milestone in semiconductor manufacturing technology, following the announcement of the world's first 300-millimeter GaN power wafer and the inauguration ...

Chipmakers Advanced Micro Devices and Infineon, together with foundry United Microelectronics Corp., are collaborating to create faster, cooler and more power-saving processors expected to be at the ...

Infineon Technologies is set to unveil a new silicon carbide (SiC) wafer fab at its plant site in Kulim, Malaysia, which aims to move from 6-inch to 8-inch production in 2025. Malaysia's Prime ...

German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN-based ...

A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride (GaN) wafer technology. Infineon Technologies claims that the company is first company in ...

BERLIN, Aug 8 (Reuters) - German technology group Robert Bosch (ROBG.UL) said on Tuesday that it will establish a joint venture with TSMC (2330.TW), opens new tab, Infineon (IFXGn.DE), opens new tab ...

(RTTNews) - German semiconductor maker Infineon Technologies AG (IFNNY) announced Wednesday the development of the world's first 300 mm power gallium nitride or GaN wafer technology. The ...

Production has started at Infineon’s 200mm silicon carbide (SiC) fab in Kulim, Malaysia. The German chipmaker’s new $2.2 billion Kulim 3 fab is the largest of its type in the world and in its first ...