In modern AI data centers and Edge computing environments, high power densities and integration levels are mandatory requirements. To meet the demand for efficient power management solutions, ...

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on Power GaN, Modernized Rectification, and Giuseppe Crippa’s Tribute! Also, check News Archives – Power ...

Dr. Milan Rosina, principal analyst for Power Electronics and Batteries at Yole Développement (Yole), said that EV charging requires much higher voltage, power, and amount of energy transferred.

Wide bandgap (WBG) semiconductors offer important advantages in terms of reliability, energy efficiency, power density, and cost reduction.

Previous section: PCB Layout for EMC, Part 2 Welcome to section, 3-3 of our Power Supply Design Tutorial. If you haven’t seen parts 3-1 and 3-2 yet, I strongly encourage you to do so. Since this ...

A good power circuit is not only composed of static devices. The gate driver precedes the electronic switches and ensures them the correct energy to drive them in the best way.

Electric motors are the beating heart of sustainable mobility. They play a fundamental role in transforming the automotive industry and beyond. With the increasing adoption of EVs and a growing focus ...

The heart of electric vehicles is an electric motor that supplies mechanical power and torque to the wheels. As for any other component in an EV, weight, efficiency and compactness of the motor are ...

The easy-to-use thermal calculator tool from EPC provides quick estimates for the thermal performance of PCB-mounted GaN devices.

GaN transistors are significantly faster and smaller than silicon MOSFETs. GaN switching devices are available in two different types.

Compared to silicon, GaN allows to obtain important improvements, such as greater energy efficiency, smaller dimensions, lower weight, and lower overall cost.

Aehr Test Systems disclosed an initial order for a FOX-NP wafer-level test and burn-in system intended for GaN power devices.