In this Wine Down Friday, we chat with Reza Kazerounian, President and Co-Founder of Alif Semiconductor. Reza shares stories from his career at STMicroelectronics, Freescale, and Atmel, and the vision ...

For decades, India has produced some of the world’s best science and engineering talent, much of which traditionally migrated abroad in search of opportunities. That narrative is now shifting. With a ...

In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing ...

Find the latest Power Supplies & Energy Storage news and insights in the electronics and technology industries. Visit to learn more.

Following an initial rollout of 200mm SiC to a select group of customers, the strong reception and demonstrated advantages have led to its full commercial release. Wolfspeed, Inc. has officially ...

The reference design delivers high efficiency and power density, utilizing silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). Infineon Technologies AG has announced the launch of a 12 kW ...

The growing adoption of GaN has led to intense patenting activity among companies producing GaN-based devices. Gallium Nitride (GaN) is a wide bandgap (WBG) semiconductor that, compared to ...

Wireless power transfer (WPT) has several applications, including charging mobile devices, industrial robotics, tools and drones, and charging EVs. Wireless power transfer (WPT) can have wide-ranging ...

This latest 3.3 kV SiC MOSFET advances NoMIS Power’s established device platform into the medium-voltage range. NoMIS Power Corporation has officially introduced its inaugural 3.3 kV silicon carbide ...

A key enabler of true 3D heterogeneous integration is through-GaN strata vias: a breakthrough technology that vertically connects GaN layers to underlying silicon (Si) substrates.

Infineon’s Marijana Vukicevic discusses the evolving role of MCUs in high-performance motor control and power conversion applications. Welcome to today’s podcast, where we explore the dynamic world of ...

Future Electronics’ power system design laboratory, based in London, has implemented a SiC-MOSFET-based design for a 3-kW LLC power supply, which steps a nominal 390-VDC input down to a 49-VDC nominal ...