Paul Crump, head of the High-Power Diode Laser Lab at the Ferdinand-Braun-Institut (FBH) in Berlin, will lead the newly formed working group together with Will Fenwick from LLNL. Along with the FBH, ...

To create a stable p-type layer, nickel atoms were injected into the gallium oxide layer at high speed. The material was then ...

Researchers at Nagoya University in Japan have created the first functional pn diodes using Ga 2 O 3. Their method 'P-type ...

Gallium oxide (Ga₂O₃) is a semiconductor material that could make electronic devices much more energy-efficient than current ...

ACMER, a pioneer in precision fabrication tools, has announced the launch of the ACMER X1, the world’s first 120W & 4W IR ...

For power measurements in wireless telephony and high-speed data communication systems, the Schottky diode is the predominant choice. Current and voltage are indeed important, but power gives us a ...

The use of an anti-parallel Schottky barrier diode (SBD) can improve the performance and reliability of silicon carbide MOSFETs in power conversion applications. In this article, we will showcase ...

Researchers are constantly exploring new and efficient energy-harvesting technologies, with solar energy and photovoltaic (PV) cells being among the most widely used. However, the Shockley-Queisser ...