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Timing is increasingly dependent on vectors. Can static techniques continue to deliver the necessary results? Maybe.
The transistor, invented at Bell Labs in 1947, replaced bulky vacuum tubes and enabled the miniaturization revolution that ...
Ampleon has launched four 700-W GaN-on-SiC RF transistors for S-band radar systems, operating between 2.7 GHz and 3.5 GHz. The CLS3H2731 and CLS3H3135 series leverage a radar-optimized GaN-on-SiC ...
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Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped indium ...
The rise in advancements related to techniques for diamond synthesis, such as MPCVD (Microwave Plasma CVD), is developing lab-grown diamond that acts as a potential resource for semiconductors.
Department of Physics, University of Washington, Seattle, Washington 98195, United States Intelligence Community Postdoctoral Research Fellowship Program, University of Washington, Seattle, Washington ...
Infineon is advancing industry-wide standardization by offering its CoolGaN Generation 3 (G3) transistors in silicon MOSFET packages. The IGD015S10S1 100-V transistor will be housed in a 5×6-mm ...
A technical paper titled “Roadmap for Schottky barrier transistors” was published by researchers at University of Surrey, Namlab gGmbH, Forschungszentrum Jülich (FZJ), et al. “In this roadmap we ...
Materials Physics-Oslo, Department of Sustainable Energy Technology, SINTEF Industry, NO-0314 Oslo, Norway ...
MIT researchers have developed a new type of 3D transistor that could be more energy-efficient and powerful than current silicon-based transistors. The novel 3D transistors have been designed using ...
Nanoscale 3D transistors made from ultrathin semiconductor materials can operate more efficiently than silicon-based devices, leveraging quantum mechanical properties to potentially enable ...