An anti-log amplifier design with a temperature-compensation network built around a nearly linear PTC thermistor.

Abstract: An analysis of the intermodulation distortion (IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is ...

Abstract: This article describes the recent advances in very high-power transistors and amplifiers for applications above 1MHz. It focuses primarily on GaN-on-SiC HEMT devices for pulsed applications.

‘Exasperating’ council can’t do the basics – but now wants a four-day week Five local authorities are looking to slash work hours by 20 per cent – but opponents say it will make a broken system worse ...