Abstract: The authors report a common emitter current gain /spl beta/ of 55 in npn epitaxial-emitter 4H-SiC bipolar junction transistors. The spacing between the p+ base contact implant and the edge ...

Abstract: In principle, a memory field-effect transistor (FET) based on the metal-ferroelectric-semiconductor gate stack could be the building block of an ideal memory technology that offers random ...