Abstract: This study presents the first functional advanced CFET inverter with an industry-leading 48nm gate pitch, exhibiting well-balanced voltage transfer characteristics up to 1.2 V. In this paper ...
一些您可能无法访问的结果已被隐去。
显示无法访问的结果一些您可能无法访问的结果已被隐去。
显示无法访问的结果