Abstract: High-electron mobility transistors (HEMTs) employing AlGaN/GaN heterostructures are suitable for high-power and high-frequency applications. To meet target specifications, GaN HEMTs must be ...

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Mikeie Reiland is a staff writer for Education at Forbes Advisor. Before coming to Forbes Advisor, he wrote magazine journalism for publications like the Oxford American, Bitter Southerner, and Gravy.