TAOYUAN, Taiwan – Inotera Memories Inc., a DRAM-making joint venture formed between Infineon Technologies AG and Nanya Technology Corp. in 2002, opened its 300-mm wafer fab Wednesday (June 30). The ...

A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride (GaN) wafer technology. Infineon Technologies claims that the company is first company in ...

Infineon Technologies AG and Nanya Technology Corp. today said they are working together to develop DRAM chips using 300mm technology, and will also build a 300mm fab in Taiwan. As part of the ...

Infineon Technologies has disclosed its latest milestone in semiconductor manufacturing technology, following the announcement of the world's first 300-millimeter GaN power wafer and the inauguration ...

German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN-based ...

Infineon Technologies is set to unveil a new silicon carbide (SiC) wafer fab at its plant site in Kulim, Malaysia, which aims to move from 6-inch to 8-inch production in 2025. Malaysia's Prime ...

BERLIN, Aug 8 (Reuters) - German technology group Robert Bosch (ROBG.UL) said on Tuesday that it will establish a joint venture with TSMC (2330.TW), opens new tab, Infineon (IFXGn.DE), opens new tab ...